NDLI: InP hot electron transistor with a buried metallic gate for electron emission

Content Provider	IEEE Xplore Digital Library
Author	Miyamoto, Y. Yamamoto, R. Maeda, H. Takeuchi, K. Wernersson, L.-E. Furuya, K.
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan (Miyamoto, Y.; Yamamoto, R.; Maeda, H.; Takeuchi, K.)
Abstract	Transistors with vertical heterostructures are attractive because of their inherent controllability of the propagating distance. However, a heavily doped layer introduces impurity scattering and carrier-carrier scattering in the base layer. To eliminate the doped layer from the active region, we proposed a hot electron transistor (HET) with a buried metallic gate. In this device, the base layer in the hot electron transistor is replaced by an embedded metal grating, which is forward biased in order to extract carriers from the emitter. Data for the conduction band edge when the device is operated is given. An attractive potential in the undoped region is clearly different from a permeable base transistor, which uses doped channel depletion. In this report, we present an InP HET with a buried metallic gate. To reduce leakage current between emitter and gate, we used freestanding tungsten wire. A simple estimation of the device speed is also presented.
Starting Page	95
Ending Page	96
File Size	115079
Page Count	2
File Format	PDF
ISBN	0780373170
DOI	10.1109/DRC.2002.1029531
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron emission Indium phosphide Scattering Controllability Impurities Gratings Data mining Leakage current Tungsten Wire
Content Type	Text
Resource Type	Article

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InP hot electron transistors with reduced emitter width for controllability of collector current by gate bias

Freestanding tungsten wires for BM-HET

Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

Comparative investigation of gate leakage current in single and double channel InP HEMT

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Proposal of buried metal heterojunction bipolar transistor and fabrication of HBT with buried tungsten

Tungsten buried growth by using thin flow-liner for small collector capacitance in InP HBT

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InP hot electron transistor with a buried metallic gate for electron emission

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