NDLI: Digital thin film non-volatile optical memory

Content Provider	IEEE Xplore Digital Library
Author	Chi, R.C.J. Steckl, A.J.
Copyright Year	2001
Description	Author affiliation: Lab. of Nanoelectronics, Cincinnati Univ., OH, USA (Chi, R.C.J.)
Abstract	Optical memory devices are conventionally fabricated by laser beam processing. In this paper, we report on the use of a Ga/sup +/ focused ion beam to "write" data on a SiO/sub 2/ film grown on Si. The use of FIB milling has the advantage of creating smaller data storage elements and higher data density (than current DVD devices) since the ion beam can be focused into a much smaller spot size (as small as 8 nm in diameter) than that of lasers. The FIB-written data has a sub-micron structure with multiple bit capacity per physical location and can be read by far-field optical detection. The extended lifetime of data stored on a robust material such as SiO/sub 2//Si produces a data storage option with excellent survival under harsh environments such as high temperature and radiation.
Sponsorship	Electron Devices Soc
Starting Page	137
Ending Page	138
File Size	163732
Page Count	2
File Format	PDF
ISBN	0780370147
DOI	10.1109/DRC.2001.937904
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical films Nonvolatile memory Particle beam optics Optical devices Ion beams Laser beams Semiconductor films Milling DVD Laser theory
Content Type	Text
Resource Type	Article

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