NDLI: Characteristics of submicron HBTs in the 140-220 GHz band

Content Provider	IEEE Xplore Digital Library
Author	Urteaga, M. Scott, D. Mathew, T. Krishnan, S. Wei, Y. Dahlstrom, M. Rodwell, M.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA (Urteaga, M.)
Abstract	Reports the measurement of submicron transferred-substrate InGaAs/InAlAs heterojunction bipolar transistors (HBTs) in the 140-220 GHz frequency band. We believe this is the first reported characterization of HBTs above 110 GHz. Previous measurements of transferred-substrate HBTs have predicted record values of power gain cutoff frequency by extrapolating at -20 dB/decade the unilateral power gain measured at 110 GHz. Due to uncertainties associated with our measurement techniques, the unilateral power gain could not be determined for higher-gain devices. Additionally, transistor S-parameters measured in the 140-220 GHz band do not correlate well with a hybrid-pi model derived from measurements at lower (6-45 GHz) frequencies.
Sponsorship	Electron Devices Soc
Starting Page	101
Ending Page	102
File Size	206404
Page Count	2
File Format	PDF
ISBN	0780370147
DOI	10.1109/DRC.2001.937892
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors Frequency measurement Gain measurement Calibration Power measurement Measurement standards Phase measurement Electromagnetic measurements Scattering parameters Electrical resistance measurement
Content Type	Text
Resource Type	Article

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