NDLI: Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement

Content Provider	IEEE Xplore Digital Library
Author	Jing Li Augustine, C. Salahuddin, S. Roy, K.
Copyright Year	2008
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN (Jing Li; Augustine, C.; Salahuddin, S.; Roy, K.)
Abstract	Spin-torque transfer magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRAM, DRAM and flash memories. It also solves the key drawbacks of conventional MRAM technology: poor scalability and high write current. In this paper, we analyzed and modeled the failure probabilities of STT MRAM cells due to parameter variations. Based on the model, we developed an efficient simulation tool to capture the coupled electro/magnetic dynamics of spintronic device, leading to effective prediction for memory yield. We also developed a statistical optimization methodology to minimize the memory failure probability. The proposed methodology can be used at an early stage of the design cycle to enhance memory yield.
Starting Page	278
Ending Page	283
File Size	989540
Page Count	6
File Format	PDF
ISBN	9781605581156
ISSN	0738100X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Association for Computing Machinery, Inc. (ACM)
Subject Keyword	Probability Random access memory Predictive models Read-write memory Flash memory Scalability Failure analysis Magnetic analysis Couplings Magnetic devices Yield STT MRAM
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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