NDLI: Characterization of Nickel Silicides Produced by Millisecond Anneals

Content Provider	IEEE Xplore Digital Library
Author	Adams, B. Jennings, D. Kai Ma Mayur, A.J. Moffatt, S. Nagy, S.G. Parihar, V.
Copyright Year	2007
Description	Author affiliation: Front End Products, Sunnyvale (Adams, B.; Jennings, D.; Kai Ma; Mayur, A.J.; Moffatt, S.; Nagy, S.G.; Parihar, V.)
Abstract	Nickel silicides serve as the source, drain, and gate contact material in many advanced complementary metal oxide semiconductor (CMOS) logic applications. Nickel has demonstrated numerous advantages over Cobalt and Titanium silicides of earlier technology nodes. Traditionally, these silicides have been formed by Rapid Thermal Processing (RTP) techniques. Two separate RTP anneals are typically used to form the silicides. In this paper, we explore the formation and film characteristics of nickel silicides produced by millisecond anneals. An overview is first provided of the nickel silicide resistivities as a function of RTP anneal temperature. When plotted, this data provides the transformation curves for the RTP Soak and Spike anneals of thin nickel films. A method is described for estimating the nickel silicide activation energy using these transformation curves and, subsequently, a calculation of the requisite laser power to produce a nickel silicide of comparable resistivity. Film characteristics and morphology of the resultant nickel silicides are evaluated by Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) analysis techniques.
Starting Page	155
Ending Page	160
File Size	1565943
Page Count	6
File Format	PDF
ISBN	9781424412273
DOI	10.1109/RTP.2007.4383836
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-10-02
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nickel Silicides Rapid thermal annealing CMOS logic circuits Conductivity Inorganic materials Semiconductor materials Cobalt Titanium CMOS technology
Content Type	Text
Resource Type	Article

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