NDLI: Superior etch performance of Ar/N2/F2 for PECVD chamber clean

Content Provider	IEEE Xplore Digital Library
Author	Riva, M. Pittroff, M. Schwarze, T. Wieland, R. Oshinowo, J.
Copyright Year	2009
Description	Author affiliation: IZM Fraunhofer Institute, Munich, Germany (Wieland, R.) \|\| Solvay Fluor GmbH, Hans-Bockler Allee, 20 30173 Hannover (D), Germany (Riva, M.; Pittroff, M.; Schwarze, T.; Oshinowo, J.)
Abstract	F2 gas mixtures offer ideal properties to be employed as chamber cleaning gas: low dissociation energy and high reactivity, which leads to superior efficiency and ease of abatement. In this work, a new F2 gas mixture was used with a combination ratio of 10% Ar, 20% F2 and 70% N2 in order to obtain a maximum of 20% fluorine in inert gases. This novel Ar/N2/F2 gas mixture has been evaluated as a candidate to replace conventional cleaning gases, like NF3, C2F6 and CF4 in an industrial AMAT P5000 CVD chamber tool. Standard equipment has been used, showing complete compatibility with the new gas. The tested Ar/N2/F2 mixture shows improvements in both parameters, cleaning at a faster rate (up to more 27%), even requiring a lower amount of gas (minus 96% versus NF3). The higher etching rate and the lower gas consumption assure a sensible CoO (Cost of Ownership) advantage to any potential user. The superior etch rate performance of the Ar/N2/F2 gas mixture was combined with excellent etch non uniformities values, of °3% (1sigma) on SiO2 and of °8% (1sigma) on Si3N4, respectively. Also amorphous Silicon (a-Si) was etched completely and uniformly. The particle performance data showing in average just 14 particle adders (0.25µm), indicating that no significant particle contamination was induced by the process and Ar/N2/F2 can be used as a highly clean and efficient etching gas as well as an ideal drop-in replacement for the conventional cleaning gases.
Starting Page	128
Ending Page	132
File Size	587280
Page Count	5
File Format	PDF
ISBN	9781424436149
ISSN	10788743
DOI	10.1109/ASMC.2009.5155971
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-10
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Argon Cleaning Gases Noise measurement Gas industry Testing Costs Amorphous silicon Contamination
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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