NDLI: Frequency dependence study of a bias field-free nano-scale oscillator

Content Provider	IEEE Xplore Digital Library
Author	Windbacher, T. Osintsev, D. Makarov, A. Mahmoudi, H. Sverdlov, V. Selberherr, S.
Copyright Year	2014
Description	Author affiliation: Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria (Windbacher, T.; Osintsev, D.; Makarov, A.; Mahmoudi, H.; Sverdlov, V.; Selberherr, S.)
Abstract	Oscillators belong to the group of fundamental building blocks and are ubiquitous in modern electronics. Especially spin torque nano oscillators are very attractive as cost effective on-chip integrated microwave oscillators, due to their nano-scale size, frequency tunability, broad temperature operation range, and CMOS technology compatibility. Recently, we proposed a micromagnetic structure capable of operating as non-volatile flip flop as well as a spin torque nano oscillator. The structure consists of three anti-ferromagnetically coupled stacks (two for excitation A, B and one for readout Q) and a shared free magnetic layer. Micromagnetic simulations show a current regime, where the structure exhibits large, stable, and tunable in-plane oscillations in the GHz range without the need of an external magnetic field or an oscillating current. In this work the dependence of these oscillations on the shared free layer geometry at a fixed input current is studied. It is shown that the precessional frequency can be controlled by the dimensions of the shared free layer. Most efficient is to utilize the layer thickness to control the precessional frequency, but also changing the layer length can be exploited.
Starting Page	1
Ending Page	4
File Size	663750
Page Count	4
File Format	PDF
ISBN	9781479954339
DOI	10.1109/IWCE.2014.6865862
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-03
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Oscillators Anisotropic magnetoresistance Magnetization Torque Resonant frequency Magnetic tunneling Magnetic anisotropy
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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