NDLI: Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study

Content Provider	IEEE Xplore Digital Library
Author	Amoroso, S.M. Georgiev, V.P. Towie, E. Riddet, C. Asenov, A.
Copyright Year	2014
Description	Author affiliation: Gold Stand. Simulations Ltd., Glasgow, UK (Towie, E.; Riddet, C.; Asenov, A.) \|\| Device Modelling Group, Univ. of Glasgow, Glasgow, UK (Amoroso, S.M.; Georgiev, V.P.)
Abstract	In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-AU-Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail the treatment of the boundary conditions at the channel interface to model the wave function penetration into the gate oxide. We report quantitative results of the charge density obtained by a simplified and a complete discretization approach.
Starting Page	1
Ending Page	4
File Size	3526127
Page Count	4
File Format	PDF
ISBN	9781479954339
DOI	10.1109/IWCE.2014.6865854
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-03
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Logic gates Effective mass Nanoscale devices Transistors Wave functions Boundary conditions Non Equilibrium Green Functions Nanowire FinFET Quantum Transport Schrodinger Poisson
Content Type	Text
Resource Type	Article

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