NDLI: Impact of functionalization patterns on the performance of CNTFETs

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2015 International Workshop on Computational Electronics (IWCE)

2014 International Workshop on Computational Electronics (IWCE)

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Impact of functionalization patterns on the performance of CNTFETs

Content Provider	IEEE Xplore Digital Library
Author	Claus, M. Teich, D. Mothes, S. Seifert, G. Schroter, M.
Copyright Year	2014
Description	Author affiliation: Phys. Chem., Tech. Univ. Dresden, Dresden, Germany (Seifert, G.) \|\| Center for Advancing Electron. Dresden, Tech. Univ. Dresden, Dresden, Germany (Claus, M.; Teich, D.; Mothes, S.) \|\| Dept. for Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany (Schroter, M.)
Abstract	Covalent functionalization of carbon nanotubes (CNTs) might be an option to optimize the behavior of CNT field effect transistors (FETs) [1] (despite all related technological problems). In principle, the atoms or molecules used for functionalizing are placed randomly along the CNT or they are high-ordered in decoration patterns. Here, only high-ordered functionalization patterns are studied (i) to convert metallic CNTs into semiconducting CNTs and (ii) to reduce or to increase the ambipolarity of a semiconducting CNT.
Starting Page	1
Ending Page	2
File Size	291157
Page Count	2
File Format	PDF
ISBN	9781479954339
DOI	10.1109/IWCE.2014.6865832
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-03
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap CNTFETs Electron tubes Carbon nanotubes Mathematical model Numerical models
Content Type	Text
Resource Type	Article

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