NDLI: Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs

Content Provider	IEEE Xplore Digital Library
Author	Jam-Wam Lee Yiming Lee
Copyright Year	2004
Description	Author affiliation: Dept. of Comput. Nanoelectron., Nat. Nano Device Labs., Taiwan (Jam-Wam Lee; Yiming Lee)
Abstract	Strained silicon devices have been widely studied (Lee et al., 2002; Fenouillet-Beranger et al., 2004). They possess better driving capacity than that of silicon-based devices. Double-gate strained silicon field effect transistors (FET) have recently been proposed and found better transport characteristics than single gate strained devices. For example, double-gate strained silicon FETs not only have relatively high mobility, high transconductance, and ideal subthreshold swing but also suppress short-channel effects (SCEs) (Lee et al., 2002; Fenouillet-Beranger et al., 2004). Due to superior channel controllability, excellent performance of surrounding-gate FET has also been studied to further reduce SCEs (Yang et al., 2002; Venugopal et al., 2002); however, these structures have not been well investigated for strained silicon devices. We have investigated the thickness effect of silicon-germanium for surrounding-gate strained silicon nanowire FETs by our developed 3D nanodevice simulator. R/sub SiGe/ influences the driving current characteristic of surrounding-gate strained silicon nanowire FETs. A large R/sub SiGe/ increases the driving current and does almost not change the transfer characteristics. Strained silicon surrounding-gate nanowire FETs are numerically explored and optimized with respect to various physical parameters.
Starting Page	161
Ending Page	162
File Size	165583
Page Count	2
File Format	PDF
ISBN	0780386493
DOI	10.1109/IWCE.2004.1407376
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FETs Semiconductor device modeling Germanium alloys Silicon alloys
Content Type	Text
Resource Type	Article

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