NDLI: On the electrostatics of double-gate and cylindrical nanowire MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Gnani, E. Reggiani, S. Rudan, M. Baccarani, G.
Copyright Year	2004
Description	Author affiliation: ARCES, Bologna Univ., Italy (Gnani, E.; Reggiani, S.; Rudan, M.; Baccarani, G.)
Abstract	In view of a number of roadblocks which prevent standard MOSFET scaling according to the ITRS provisions, new device architectures are being investigated in order to exploit the ultimate potential of the CMOS technology. Among such architectures, double-gate (DG) MOSFETs have been developed in view of their performance advantages, i.e. the containment of the short-channel and DIBL effects. In this work we address the electrostatics of fully-depleted DG and CNW MOSFETs at the miniaturization limit of 25 nm effective channel length. In doing so, we solve a 2D Poisson equation coupled with as many 1D Schrodinger equations as the number of mesh points along the channel, and work out a rigorous perturbative approach to the solution of the Schrodinger equation, based on the expansion of the energy eigenfunctions on the complete set of the unperturbed eigenfunctions.
Starting Page	229
Ending Page	230
File Size	118735
Page Count	2
File Format	PDF
ISBN	0780386493
DOI	10.1109/IWCE.2004.1407410
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs CMOS integrated circuits Semiconductor device modeling Electrostatic analysis Partial differential equations Quantum theory Mesh generation Eigenvalues and eigenfunctions Circuit topology
Content Type	Text
Resource Type	Article

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