NDLI: Electron exchange interaction in electronically confined Si quantum dots

Please wait, while we are loading the content...

2015 International Workshop on Computational Electronics (IWCE)

2014 International Workshop on Computational Electronics (IWCE)

2012 15th International Workshop on Computational Electronics

2010 14th International Workshop on Computational Electronics

2009 13th International Workshop on Computational Electronics

2004 Abstracts 10th International Workshop on Computational Electronics

Conference map - Purdue University

Table of contents

International Workshop on Computational Electronics (IWCE - 10) - Program

Evolution of current transport models for engineering applications

A Legendre polynomial solver for the Langevin Boltzmann equation

Efficient simulation of the full Coulomb interaction in three dimensions

A physically-based analytic model for stress-induced hole mobility enhancement

A unified modeling of NBTI and hot carrier injection for MOSFET reliability

Simulations of sub-100nm strained Si MOSFETs with high-k gate stacks

Influence of ballistic effects in ultra-small MOSFETs

TCAD process/device modeling challenges and opportunities for the next decade

A non-parabolic six moments model for the simulation of sub-100 nm devices

Multi-dimensional tunneling in density-gradient theory

TCAD ready density gradient calculation of channel charge for Si/strained Si/sub 1-x/Ge/sub x/ dual channel pMOSFETs on [001] relaxed Si/sub 1-y/Ge/sub y/

Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors

Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit: a statistical study

Thirty years of Monte Carlo simulations of electronic transport in semiconductors: their relevance to science and to mainstream VLSI technology

Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs

Phonon-limited transport in carbon nanotubes using the Monte Carlo method

Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Monte Carlo simulations of phonon transport in silicon

A self-consistent event biasing scheme for statistical enhancement

3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices

The NEGF method: capabilities and challenges

Full quantum mechanical simulation of ultra-small silicon devices in three-dimensions: physics and issues

A quantum many-body density matrix model for sub-femtosecond transport in mesoscopic structures

Numerical parallel algorithms for large-scale nanoelectronics simulations using NESSIE

Modeling of quantum nanomechanics

Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism

Quantum capacitance effects in carbon nanotube field-effect devices

Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples

Self-consistent contact block reduction method for ballistic nanodevices

Analysis of strained-Si device including quantum effect

Electronic properties of silicon nanowires

Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green's function formalism

Comprehensive simulation of vertical cavity surface emitting lasers

A self-consistent quantum mechanical simulation of p-channel strained SiGe MOSFETs

Three-dimensional quantum transport simulation of ultra-small FinFETs

Comparison of non-equilibrium Green's function and quantum-corrected Monte Carlo approaches in nano MOS simulation

Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs

Full-band particle-based analysis of device scaling for 3D tri-gate FETs

The simulation of molecular and organic devices: a critical review and a look at future development

Huckel I-V 3.0: a self-consistent model for molecular transport and its applications

Atomistic simulation of the electronic transport in organic nanostructures: electron-phonon and electron-electron interactions

First-principles modeling of molecular I-Vs and calibration to experiments

Numerical investigation of a molecular switch based on conformational change, with the inclusion of contacts

Acoustic and optical phonons in nanotubes

Simulation of power gain and dissipation in field-coupled nanomagnets

Electron exchange interaction in electronically confined Si quantum dots

Simulation and optimization of spin-orbit quantum dot circuit with integrated quantum point contact read-out

Theoretical study of molecular quantum dot cellular automata

Bennett and Landauer clocking in quantum-dot cellular automata

Circuit modeling of carbon nanotube interconnects and their performance estimation in VLSI design

Search for optimum and scalable COSMOS

Hierarchical multiscale computations of ion transport in synthetic nanopores

An application of Shockley's recombination and generation theory to biological ion channels

Simulation of ion conduction in the ompF porin channel using BioMOCA

Screening of water dipoles inside finite-length armchair carbon nanotubes

A coupled 3-D PNP/ECP model for ion transport in biological ion channels

A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches

The role of long-range forces in porin channel conduction

Random doping fluctuations of small-signal parameters in nanoscale semiconductor devices

Modeling of transport through semiconductor quantum dots: an approach based on the direct solution of the coupled Poisson-Boltzmann equations

Simulation of Schottky barrier diodes with a direct solver for the Boltzmann-Poisson system

Scaling pFET hot-electron injection

Robust computational models of quantum transport in electronic devices

Accurate deterministic numerical simulation of p-n junctions

Modeling and simulation of electron injection during programming in Twin Flash/spl trade/ devices based on energy transport and the non-local lucky electron concept

Subthreshold mobility extraction for SOI MESFETs

RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks

Silicon-germanium structure in surrounding-gate strained silicon nanowire FETs

Investigation of electrostatic discharge characteristics on low temperature polycrystalline silicon thin film transistors

Simulation of three-dimensional copper-low-k interconnections with different shapes

A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors

Local discontinuous Galerkin methods for moment models in device simulations: formulation and one dimensional results

RF performance of strained SiGe pMOSFETs: linearity and gain

Strain-dependent hole masses and piezoresistive properties of silicon

Electrostatics of 3D carbon nanotube field-effect transistors

Effective mass approach for n-MOSFETs on arbitrarily oriented wafers

A computational intelligent optical proximity correction for process distortion compensation of layout mask in subwavelength era

Smart dust: Monte Carlo simulation of self-organised transport

Efficient memory management for cellular Monte Carlo algorithm

Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

An improved Monte Carlo algorithm for ionized impurity scattering in bands with warping, non-parabolicity and degeneracy

Monte-Carlo simulation of carbon nanotube devices

3d Monte Carlo simulation of FinFET using FMM algorithm

Scattering from body thickness fluctuations in double gate MOSFETs: an ab initio Monte Carlo simulation study

The effective conduction-band edge method of quantum correction to the Monte Carlo device simulation

Monte Carlo hole mobility calculations with a first principles alloy scattering approach

A comparative study of numerical algorithms in calculating eigenpairs of the master equation for protein folding kinetics

Error analysis of the Poisson P/sup 3/M force field scheme for particle-based simulations of biological systems

Tracking the propagation of individual ions through ion channels with nano-MOSFETs

Electro-chemical modeling challenges of biological ion pumps

Simulation schemes in 2D nanoscale MOSFET's: WKB based method

Quantum potential approach to modeling nano-MOSFETs

Vortex flows in semiconductor device quantum channels: time-dependent simulation

Simulation of entanglement dynamics for a scattering between a free and a bound carrier in a quantum wire

Wigner function for identical particles

Spectral element method for the Schrodinger-Poisson system

Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling

Modeling of inelastic transport in one-dimensional metallic atomic wires

Wigner-function based simulation of classic and ballistic transport in scaled DG-MOSFETs using the Monte Carlo method

On the electrostatics of double-gate and cylindrical nanowire MOSFETs

High-resolution numerical study of conductance and noise imaging of mesoscopic devices

A critical examination of the basis of macroscopic quantum transport approaches

Numerical simulation for direct tunneling current in poly-Si-gate MOS capacitors

Numerical analysis of coaxial double gate Schottky barrier carbon nanotube field effect transistors

Single electron transport and entanglement induced by surface acoustic waves versus free ballistic propagation in coupled quantum wires

Quantum lattice-gas automata simulation of electronic wave propagation in nanostructures

From wave-functions to current-voltage characteristics in silicon single-nanocrystal Coulomb blockade devices

A high order local solver for Wigner equation

A microscopic quantum simulation of Si/SiO/sub 2/ interface roughness scattering in silicon nanowire transistors

Atomistic treatment of nanotube-metal interfaces

Electronic transport in discotic liquid crystal columns

Hybrid-basis modeling of electron transport through molecules on silicon

Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Fano resonances through quantum dots in tunable Aharonov-Bohm rings

Computer simulation of magnetization for vertically coupled nanoscale quantum rings

Modeling of the electrostatic (plasmon) resonances in metallic and semiconductor nanoparticles

Hilbert graph: an expandable interconnection for clusters

Manipulating of resonances in conductance of an electron waveguide with antidots

On the formation of periodic electric field domains in p-Si/SiGe quantum cascade structures

Three-dimensional finite-difference time-domain simulation of facet reflection through parallel computing

Tunable optical properties of colloidal quantum dots in electrolytic environments

Electronic structure and optical transitions in InAsSb/InGaAs quantum dots

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427)

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

Electron exchange interaction in electronically confined Si quantum dots

Content Provider	IEEE Xplore Digital Library
Author	Seungwon Lee von Allmen, P. Oyafuso, F. Klimeck, G. Boykin, T.B. Coppersmith, S.N. Friesen, M. Eriksson, M.A.
Copyright Year	2004
Description	Author affiliation: Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA (Seungwon Lee; von Allmen, P.; Oyafuso, F.; Klimeck, G.)
Abstract	Electron exchange interactions in electronically confined Si quantum dots are modeled with an sp/sup 3/d/sup 5/s* empirical tight-binding model. Previous work has shown that the exchange energies for electrons confined by P donors in bulk Si display a fast oscillatory behavior with respect to the inter-donor distance (Koiller et al., 2002). This result implies that P donors need to be positioned with atomic-scale precision in order to implement a Si:P based quantum computer architecture. In contrast to the Si:P architecture, electronically confined Si quantum dots show a simple exponential decay of the exchange energies with the increase of the inter-dot distance. The exponential behavior is attributed to tensile biaxial strain in the Si quantum well, which is epitaxially grown on top of a relaxed Si/sub x/Ge/sub 1-x/ layer. The tensile biaxial strain lifts the degeneracy of six valleys in the Si band structure, with the Z valley at lower than the X and Y valleys. The lowest electron wave function originates from the Z valley, and hence Bloch oscillations are present in the z direction only. As a result, when the inter-dot distance changes along the x and y directions, the exchange energy, which is determined by the overlap between the two electron wave functions, does not oscillate.
File Size	63421
File Format	PDF
ISBN	0780386493
DOI	10.1109/IWCE.2004.1407352
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dots
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in