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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Martinez-Nieto, A. Sanz-Pascual, M.T. Rosales-Quintero, P. Celma, S. |
| Copyright Year | 2013 |
| Description | Author affiliation: Electron. Design Group (GDE CDAM), Univ. of Zaragoza, Zaragoza, Spain (Celma, S.) || Electron. Dept., Inst. Nac. de Astrofis., Tonantzintla, Mexico (Martinez-Nieto, A.; Sanz-Pascual, M.T.; Rosales-Quintero, P.) |
| Abstract | A low-temperature coefficient, curvature-compensated CMOS bandgap voltage reference (BGR) is presented in this paper. The design was implemented in standard 0.18μm CMOS process with 1.8V power supply. The compensation is achieved generating the negative temperature coefficient (TC) voltage with a quadratic temperature dependent current biasing a bipolar transistor. In addition, the design has a 4-bit trimming circuit to compensate for process variations. The output voltage is 1.225V and shows a TC lower than 2ppm/°C over a temperature range of 160°C (-20°C to 140°C). The bandgap reference consumes 620μW and its total layout area is $217×147μm^{2}.$ |
| Starting Page | 97 |
| Ending Page | 100 |
| File Size | 877700 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479900664 |
| ISSN | 15483746 |
| DOI | 10.1109/MWSCAS.2013.6674594 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-08-04 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | curvature correction Bandgap reference PTAT CTAT temperature compensation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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