NDLI: A comparative study of lock range of injection-locked active-inductor oscillators

Content Provider	IEEE Xplore Digital Library
Author	Yushi Zhou Fei Yuan
Copyright Year	2010
Description	Author affiliation: Department of Electrical and Computer Engineering, Ryerson University, Toronto, Ontario, Canada (Yushi Zhou; Fei Yuan)
Abstract	This paper presents the first study of the locking mechanism and lock range of injection-locked active inductor oscillators. A comparable study on the phase noise and lock range of active inductor oscillators and corresponding LC oscillators is carried out. Two 2.4 GHz oscillators, one active inductor oscillator and the other passive LC oscillator, are designed in IBM-0.13µm 1.2V CMOS technology and analyzed using Spectre using BSIM4 device models. Simulation results demonstrate that the phase noise of the active inductor oscillator is −70.45 dBc/Hz at 1 MHz frequency offset without locking and −117.9 dBc/Hz when locked to an external 2.4 GHz reference of phase noise −126.6 dBc/Hz. The phase noise of the LC oscillator is −105.1 dBc/Hz without locking and −126.1 dBc/Hz when locked. The upper and lower bounds of the frequency of the locking signal at which the injection-locked LC oscillator is locked are 2.4+0.02 GHz and 2.4−0.02 GHz, respectively where those of the injection-locked active inductor oscillator are 2.4+0.24 GHz and 2.4−0.12 GHz, respectively. The lock range of the injection-locked active inductor oscillator is 9 times that of the corresponding injection-locked passive LC oscillator with comparable phase noise.
Starting Page	973
Ending Page	976
File Size	527954
Page Count	4
File Format	PDF
ISBN	9781424477715
ISSN	15483746
e-ISBN	9781424477739
DOI	10.1109/MWSCAS.2010.5548797
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-08-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Injection-locked oscillators Active inductors Phase noise Frequency synthesizers Transconductance Frequency conversion Tuning Q factor CMOS technology Silicon
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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