NDLI: The 90 nm Double-DICE storage element to reduce Single-Event upsets

Content Provider	IEEE Xplore Digital Library
Author	Haghi, M. Draper, J.
Copyright Year	2009
Description	Author affiliation: Electrical Engineering Department, University of Southern California, Los Angeles, USA (Haghi, M.) \|\| Information Sciences Institute, University of Southern California, Marina Del Rey, USA (Draper, J.)
Abstract	In this paper, we introduce the Double-DICE storage element, which reduces charge sharing and collecting between the sensitive nodes of sensitive pairs in a Dual Interlocked Cell (DICE) storage cell in 90 nm technology. Interleaving two DICE storage cells in layout separates sensitive nodes by 8.5 µm, which is well beyond the minimum required of 5 µm shown in an earlier work. This reduces the probability of charge collecting in a sensitive pair in one DICE caused by a Single-Event strike. An area savings of 33.3 % results as compared to the case where no interleaving is used with the same nodal separation.
Starting Page	463
Ending Page	466
File Size	873899
Page Count	4
File Format	PDF
ISBN	9781424444793
ISSN	15483746
DOI	10.1109/MWSCAS.2009.5236054
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-08-02
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Interleaved codes Single event upset Ionizing radiation MOS devices Space technology Libraries Semiconductor devices Capacitance Logic devices Protection
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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