NDLI: Assessment of CNTFET based circuit performance and robustness to PVT variations

Content Provider	IEEE Xplore Digital Library
Author	Geunho Cho Yong-Bin Kim Lombardi, F.
Copyright Year	2009
Description	Author affiliation: Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA (Geunho Cho; Yong-Bin Kim; Lombardi, F.)
Abstract	Carbon NanoTubes (CNTs) have superior transport properties, excellent thermal conductivity, and high current handling capability; recently the CNT has been proposed as an alternative device technology to supersede CMOS. In this paper, the circuit-level performance of CNT-based FETs (CNTFETs) is initially compared to MOSFETs; simulation is performed for various logic gates and benchmark circuits to assess the sensitivity to PVT variations using the same minimum gate length. The simulation results show that the delay of CNTFET-based gates is about 10 times lower; moreover, the power delay product (PDP) and the leakage power of CNTFET-based gates are lower than MOSFET based gates by orders of magnitude. These orders of improvements in performance metrics are also achieved while attaining excellent robustness to process, voltage, and temperature variations.
Starting Page	1106
Ending Page	1109
File Size	683872
Page Count	4
File Format	PDF
ISBN	9781424444793
ISSN	15483746
DOI	10.1109/MWSCAS.2009.5235961
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-08-02
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuit optimization Robustness Thermal conductivity CMOS technology MOSFETs Circuit simulation Delay Carbon nanotubes FETs Logic gates PVT variation Carbon NanoTube Field Effect Transistors (CNTFETs) Fanout Power Power Delay Product (PDP)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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