NDLI: 3.6mW, 30dB gain preamplifiers for an FM-UWB receiver

Content Provider	IEEE Xplore Digital Library
Author	Yi Zhao van Veenendaal, G. Bonakdar, H. Gerrits, J.F.M. Long, J.R.
Copyright Year	2008
Description	Author affiliation: IC Lab., NXP Semicond., Eindhoven (van Veenendaal, G.; Bonakdar, H.) \|\| Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft (Yi Zhao; Gerrits, J.F.M.; Long, J.R.)
Abstract	Two low-power, high-gain preamplifiers designed for a 7.2-7.7GHz (high band) FM-UWB receiver in 0.25mum SiGe:C-BiCMOS technology are described. Each preamplifier has single-ended input/differential outputs and is aimed at low-power, low data rate applications. Both amplifiers consume 3.6mW from a 1.8V supply. The maximum measured voltage gain is Gt30dB with 500MHz bandwidth for both designs, and they remain functional down to 1.4V supply voltage. The first amplifier (with active input balun) realizes 5.7dB measured 50Omega noise figure (NF), while the second amplifier (with passive output balun) has 4.3dB measured (50Omega) NF. This performance is sufficient to realize better than -80dBm sensitivity in a FM-UWB receiver dissipating less than 10mW at 100kbit/s data rate.
Starting Page	216
Ending Page	219
File Size	447550
Page Count	4
File Format	PDF
ISBN	9781424427253
ISSN	10889299
DOI	10.1109/BIPOL.2008.4662747
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gain Topology Preamplifiers Noise measurement Impedance matching Frequency measurement Receivers SiGe:C-BiCMOS technology high-band ultrawideband FM-UWB high-gain low-power preamplifier low data rate wireless personal area networking
Content Type	Text
Resource Type	Article

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