NDLI: A 0.5–20GHz quadrature downconverter

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2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Welcome from the chairmen

Call for papers

BCTM 2008 table of contents

A 40 GS/s SiGe track-and-hold amplifier

An ultra low power 10 Gbps LVDS output driver

A SiGe BiCMOS operational amplifier with 48dB of gain and 9GHz unity gain bandwidth

A 37nV/√Hz 2.5V reference based on dual-threshold JFET technology

A 4–40MHz continuous-time LPF with on chip automatic tuning for a direct conversion DBS Tuner

A low power multi-mode baseband for direct-conversion WLAN transceiver and DVB-H

On the profile design of SiGe HBTs for RF lunar applications down to 43 K

Gate controlled vertical-lateral NPN bipolar transistor in 90nm RF CMOS process

Special RF/microwave devices in Silicon-on-Glass Technology

Forced-IE pinch-in maximum output voltage limit in SiGe HBTs operating at cryogenic temperatures

Digital control power — The key to intelligent energy efficiency

Development of a self-protected and self-controlled integrated power switch: Comparison of two circuit architectures

Lateral PNP BJT ESD protection devices

Design of highly-efficient wideband RF polar transmitters using the Envelope-Tracking technique

A 13.5-to-17 dBm P1dB, selective, high-gain power amplifier for 60 GHz applications in SiGe

A wideband high-efficiency 79–97 GHz SiGe linear power amplifier with ≫ 90 mW output

Verilog-A modeling of BJT NQS excess phase

A new explicit expression for the normalized hole charge improves the accuracy of HICUM/L0

Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K

SOA reduction due to combined electrothermal and avalanche effects in multifinger bipolar transistors

0.13μm SiGe BiCMOS technology for mm-wave applications

BiCMOS technology improvements for microwave application

A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT

Low cost, highly flexible complementary bipolar transistors compatible with 0.18 or 0.13μm CMOS technology

A 79-GHz radar transceiver with switchable TX and LO feedthrough in a Silicon-Germanium technology

An 850 mW X-Band SiGe power amplifier

An area and phase noise improved 19-GHz down-converter VCO for 77-GHz automotive radar frontends in a SiGe Bipolar Production Technology

A 19GHz DRO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology

SiGe HBTs featuring fT ≫400GHz at room temperature

Demonstration of a 270 GHz fT SiGe-C HBT within a manufacturing-proven 0.18μm BiCMOS process without the use of a raised extrinsic base

Ultra-low-power SiGe HBT technology for wide-range microwave applications

Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers

Characterization and modeling of emitter-base leakage in high speed SiGe NPNs

Experimental proof of current bifurcation and mutual heating in bipolar transistor arrays

Geometry scaling issues originated by extrinsic stress in SiGe HBTs

Opportunities for silicon at mmWave and Terahertz frequencies

Silicon photonics: The inside story

Unipolar and bipolar organic field-effect transistors

Designing electronic systems for space

60GHz quadrature signal generation with a single phase VCO and polyphase filter in a 0.25μm SiGe BiCMOS technology

60 GHz ultra low phase noise sige common base oscillator using a wirebond coupled mcm integrated micromachined cavity resonator

A 0.5–20GHz quadrature downconverter

A Q-band phased-array front-end with integrated Wilkinson couplers for linear power combining in SiGe BiCMOS

Development of power devices for hybrid vehicles

Pushing away the silicon limits of ESD protection structures: Exploration of crystallographic orientation

Silicon RFCMOS SOI technology with above-IC MEMS integration for front end wireless applications

Footprint design optimization in SiGe BiCMOS SOI technology

High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies

3.6mW, 30dB gain preamplifiers for an FM-UWB receiver

A 2.6-GHz zero-IF Mobile-TV front-end RFIC for CMMB applications

A 5GHz low power receiver front-end RFIC with one tail current implemented in SiGe BiCMOS technology

A mixed signal wide-band BiCMOS frequency synthesizer for DVB application

From measurement to intrinsic device characteristics: Test structures and parasitic determination

Improvement on de-embedding accuracy by removing parasitics of short standards

Common-base intermodulation characteristics of advanced SiGe HBTs

Large signal SiGe HBT model validation for 77GHz large signal applications

A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator

A 3-Bit 2.2V 3.08pJ/conversion-step 11GS/s flash ADC in a 0.12μm SiGe BiCMOS technology

High-Speed A/D & D/A conversion: A survey

A single-channel 10b 1GS/s ADC with 1-cycle latency using pipelined cascaded folding

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

2006 Bipolar/BiCMOS Circuits and Technology Meeting

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440)

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212)

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)

Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

A 0.5–20GHz quadrature downconverter

Content Provider	IEEE Xplore Digital Library
Author	Bardin, J.C. Weinreb, S.
Copyright Year	2008
Description	Author affiliation: California Inst. of Technol., Pasadena, CA (Bardin, J.C.; Weinreb, S.)
Abstract	A quadrature downconverter with 4 GHz IF bandwidth and working over the 0.5-20 GHz RF frequency range has been designed, fabricated, and tested. The downconverter uses a frequency doubling and dividing scheme to generate quadrature local oscillator signals from 0.5-17 GHz and a pair of Gilbert-cell mixers to perform downconversion. When the IF outputs are combined with a commercial quadrature hybrid, the mixer achieves an image rejection ratio greater than 35 dB over the entire band with no on-chip calibration or tuning. The active die area is approximately 0.5times1 $mm^{2}.$
Starting Page	186
Ending Page	189
File Size	504102
Page Count	4
File Format	PDF
ISBN	9781424427253
ISSN	10889299
DOI	10.1109/BIPOL.2008.4662740
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency conversion Mixers Gain Radio frequency Bandwidth Broadband communication Power harmonic filters receiver Quadrature downconverter frequency doubler frequency divider IQ mixer image rejection wideband broadband
Content Type	Text
Resource Type	Article

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