NDLI: Three-level driving method for GaN transistor with improved efficiency and reliability within whole load range

Content Provider	IEEE Xplore Digital Library
Author	Tong Sun Xiaoyong Ren Hao Dang Zhiliang Zhang Xinbo Ruan
Copyright Year	2014
Description	Author affiliation: Coll. of Autom. Eng., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China (Tong Sun; Xiaoyong Ren; Hao Dang; Zhiliang Zhang; Xinbo Ruan)
Abstract	Compared with Si MOSFET, gallium nitride (GaN) power transistor has higher reverse conduction voltage drop due to the absence of body-diode, which will result in higher reverse conduction loss. Furthermore, the oscillation on the driving voltage is quite severe when the GaN transistor operates in high frequency condition, which is critical for GaN transistor because of its relatively narrow driving voltage range. To guarantee GaN transistor operating reliably, driving voltage can't be set high enough to have lower conduction resistance, thus reducing the forward conduction loss. The existed three-level driving method for GaN transistor solves the issue of high reverse conduction voltage drop in some extent, but not completely, and the problem of driving voltage ringing still exists. This paper proposes an improved three-level driving method for GaN transistor in synchronous Buck converter. The method can reduce the reverse conduction loss within the whole load range and effectively decrease the ringing of the driving voltage. The mechanism for the reduction of the driving voltage ringing is presented and simulation results verify the analysis finally.
Sponsorship	IEEE Power Electron. Soc.
Starting Page	2569
Ending Page	2573
File Size	720342
Page Count	5
File Format	PDF
ISBN	9781479923250
DOI	10.1109/APEC.2014.6803665
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-03-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Diffusion tensor imaging Power transistors Inductance MOSFET Silicon
Content Type	Text
Resource Type	Article

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