NDLI: Examples of high-speed harmonic load pull investigations of high-efficiency GaN power transistors

Content Provider	IEEE Xplore Digital Library
Author	Marchetti, M. Maier, T. Carrubba, V. Maroldt, S. Musser, M. Quay, R.
Copyright Year	2015
Description	Author affiliation: Anteverta-mw B.W., Delft, Netherlands (Marchetti, M.; Maier, T.; Carrubba, V.; Maroldt, S.; Musser, M.; Quay, R.)
Abstract	This paper presents the capability of an advanced and high-speed, mixed-signal active harmonic load-pull system through measurement activity on AlGaN/GaN transistors. The advantages of the GaN technology which can provide a high power density and a high efficiency are best exploited when the optimum fundamental and harmonic terminations are provided to the transistor. The ultra-high speed of the system, together with its capability to control up to three harmonic impedances, can be used to search for the optimum terminations in a fast and effective manner. This has led to max drain efficiency as high as 90% at 2 GHz, while delivering at the same time 3.5 W of output power for a 1.2 mm device gate width. Further X-band analysis by using the same load-pull system, yields PAE >65 % over the entire wafer.
Starting Page	1
Ending Page	4
File Size	1212306
Page Count	4
File Format	PDF
e-ISBN	9781479974733
DOI	10.1109/COMCAS.2015.7360409
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-02
Publisher Place	Israel
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	aluminum gallium nitride Power system harmonics Harmonic analysis power transistor Gallium nitride Load pull Power amplifiers high efficiency Power transistors mixed-signal power amplifiers Impedance Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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