NDLI: The effects of incident angle on C-axis orientation in sputtered Co-Cr films

Content Provider	IEEE Xplore Digital Library
Author	Niimura, Y. Nakagawa, S. Naoe, M.
Copyright Year	1965
Abstract	The effects of the incident angle of the sputtered atoms on the crystallographic orientation in the Co-Cr films have been investigated in detail. Specimen films 1000 - 2000 Å thick were prepared by the Facing Targets Sputtering (FTS) system. The specially designed mask was used for collecting only the sputtered particles with the quasi-coherent incidence to the substrate. When the films are prepared at relatively low argon gas pressures, the effect of incident angle is not so apparent and the well c-axis oriented films can be obtained for the incident angle below 45°. This result indicate that the surface diffusion may be dominant over the incident angle for attaining the desired crystallographic orientation in the films when they are prepared at low working gas pressures. Owing to the unique target/substrate layout, the plasma-free FTS system with low working gas pressures may have much larger flexibilities for preparing the well c-axis oriented Co-Cr films as compared with the conventional sputtering systems or the vacuum evaporation one.
Sponsorship	IEEE Magnetics Society
Starting Page	2043
Ending Page	2045
Page Count	3
File Size	287912
File Format	PDF
ISSN	00189464
Volume Number	23
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Magnetic films Perpendicular magnetic recording Sputtering Crystallography Crystallization Plasma confinement Argon Kinetic energy Atomic layer deposition
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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