NDLI: Characterization of a 4 Mbit bubble memory device with Wide gap permalloy propagation tracks

Content Provider	IEEE Xplore Digital Library
Author	Inoue, H. Amatsu, M. Yanase, T. Majima, T. Kaneko, Y. Orihara, S. Iwasa, S.
Copyright Year	1965
Abstract	A 4 Mbit bubble memory device with "wide gap" propagation tracks has been fabricated and characterized. The 4 Mbit device is composed of four 1 Mbit blocks which are architecturally designed to be compatible with an existing 1 Mbit device, and the relaxed function design has been employed to achieve functional compatibility, in addition to architectural compatibility. The results obtained in the characterization of functions, such as a generator, a detector, swap gates and replicate gates, show the realization to guarantee the same operational conditions as those of the 1 Mbit device. The overall operating margins of the fabricated chips were measured in the temperature range of 0°C to 90°C, and the temperature coefficients were found to be -0.18 %/°C to -0.20 %/°C. A compact package for the 4 Mbit chip was designed. The package size is 36.4 × 34 × 11.5 mm³and the number of pin-outs is 42. A sufficient operating margin was confirmed in the case temperature range of -10°C to 90°C. The power consumption of the device is 1.1 W, which is approximately 0.6 to 0.7 times as much as those reported so far.
Sponsorship	IEEE Magnetics Society
Starting Page	1681
Ending Page	1683
Page Count	3
File Size	370264
File Format	PDF
ISSN	00189464
Volume Number	21
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Detectors Packaging Temperature distribution Temperature measurement Propagation losses Conductors Character generation Semiconductor device measurement Energy consumption Printing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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