NDLI: Influence of ion implantation on magnetostatic volume wave propagation

Content Provider	IEEE Xplore Digital Library
Author	Hartemann, P. Fontaine, D.
Copyright Year	1965
Abstract	Magnetostatic forward volume wave (MSFVW) propagation perturbations induced by ion implantation in pure YIG films, have been investigated in order to perform high quality reflective arrays. Helium ions have been implanted at an energy between 40 and 340 keV with a dose of about 10¹⁶⁴He+/cm², the thickness of YIG films being close to 20μm. The thickness of the YIG layer with a crystalline lattice perturbed by incident ions has been determined for different implantation conditions. In a theoretical approach of MSFVW propagation changes resulting from ion implantation, the perturbed YIG layer has been considered as nonmagnetic. A MSFVW group velocity decrease of 3.4% has been measured. This value is consistent with this theoretical model. Moreover after implantation no extra propagation loss has been observed up to 10GHz. MSFVW reflection coefficient on the wave impedance discontinuity induced by ion implantation has been determined It can reach 10%.
Sponsorship	IEEE Magnetics Society
Starting Page	1595
Ending Page	1597
Page Count	3
File Size	250178
File Format	PDF
ISSN	00189464
Volume Number	18
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1982-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion implantation Magnetostatic waves Optical films Crystallization Lattices Velocity measurement Propagation losses Reflection Impedance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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