NDLI: An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Wanling Deng Junkai Huang Xiaoyu Ma Liou, J.J.
Copyright Year	1980
Abstract	In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.
Sponsorship	IEEE Electron Devices Society
Starting Page	108
Ending Page	110
Page Count	3
File Size	839361
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs MODFETs Gallium nitride Aluminum gallium nitride Mathematical model Numerical models Analytical models AlGaN/GaN high-electron mobility transistor (HEMT) drain current compact model self-heating effect
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs