NDLI: Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in In<sub>x</sub>Ga<sub>1-x</sub>As FinFET

Content Provider	IEEE Xplore Digital Library
Author	Agrawal, N. Thathachary, A.V. Mahapatra, S. Datta, S.
Copyright Year	1980
Abstract	In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in In_xGa_1-xAs FinFET with varying Indium (x=0.53 , 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In_0.7Ga_0.3As QW FinFET provides better performance than In_0.53Ga_0.47As bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that In_0.7Ga_0.3As QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e., near threshold operation) to meet 10 years of reliability specifications at 85 °C.
Sponsorship	IEEE Electron Devices Society
Starting Page	120
Ending Page	122
Page Count	3
File Size	1367495
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs Reliability Logic gates Stress Quantization (signal) Aluminum oxide Threshold voltage Time to Failure (TTF) III-V FinFET Positive Bias Temperature Instability (PBTI) Quantum Well time to failure (TTF) positive bias temperature instability (PBTI) quantum well
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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