NDLI: Lateral complementary transistor structure for the simultaneous fabrication of functional blocks

Content Provider	IEEE Xplore Digital Library
Author	Lin, H.C. Tan, T.B. Chang, G.Y. Van Der Leest, B. Formigoni, N.
Copyright Year	1963
Abstract	Heretofore, the schemes for fabricating a complementary transistor structure in a monolithic functional block entailed either some additional, difficult-to-control processing steps or a sacrifice in isolation of the collector regions of one type of transistor. This paper describes an isolated p-n-p transistor structure fabricated by the same technique used for the conventional all n-p-n transistor functional block without any additional processing steps. The basic p-n-p transistor has a lateral structure. During the p-type base diffusion of the n-p-n transistor, two concentric p-type regions at close distance are selectively diffused into an isolated n- type region such as that used for the collector of an n-p-n transistor. The center p-type diffused region forms the emitter and the outer ring forms the collector. The n-type spacing between these two regions serves as the base. The current gain of this transistor is not high, typically around unity. However, by amplifying the collector current of the p-n-p transistor with an n-p-n transistor, the composite transistor acts like a high gain p-n-p transistor and the composite current gain can be made comparable to that of the n-p-n transistor in the same functional block. The lateral complementary transistor has been used extensively and successfully for the fabrication of linear functional blocks such as those used in the Advanced Minuteman Program.
Sponsorship	IEEE Publication
Starting Page	1491
Ending Page	1495
Page Count	5
File Size	1297960
File Format	PDF
ISSN	00189219
Volume Number	52
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1964-12-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Transistors Electric variables Density estimation robust algorithm Substrates Molecular electronics Cutoff frequency Capacitance
Content Type	Text
Resource Type	Article
Subject	Computer Science Electrical and Electronic Engineering

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