NDLI: Switching Loss Analysis of 4.5-kV–5.5-kA IGCTs Within a 3L-ANPC Phase Leg Prototype

Content Provider	IEEE Xplore Digital Library
Author	Andler, D. Alvarez, R. Bernet, S. Rodriguez, J.
Copyright Year	1972
Abstract	Three-level active neutral-point-clamped (NPC) (3L-ANPC) voltage-source converters (3L-ANPC-VSCs) enable additional switch states and commutations compared to the three-level NPC voltage-source converters (3L-NPC-VSCs). They are used to overcome one important disadvantage of the 3L-NPC-VSC, the unequal semiconductor loss distribution. With an accurate switching model (obtained directly from the measurements), it is possible to improve the junction temperature distribution among the power devices, increasing the 3L-ANPC-VSC output power and/or increasing the frequency and/or decreasing the derating of the converter. This paper presents the characterization of a 4.5-kV-5.5-kA integrated gate-commutated thyristor (IGCT) within a 3L-ANPC phase leg. A quantitative analysis of the switching losses using 5SHY55L4500 IGCTs and D1961SH45T press-pack diodes for a current range from 1 to 4.5 kA and junction temperatures between 25 ^° C and 125 ^° C is presented. The 3L-ANPC phase leg performs 32 different commutations. Each commutation exhibits different switching losses, as a result of the different commutation paths and their stray inductances. This switching energy range is presented and quantified. Finally, a simplified switching loss model considering the maximal switching losses in terms of the commutation current and the junction temperature is presented.
Sponsorship	IEEE Industry Applications Society
Starting Page	584
Ending Page	592
Page Count	9
File Size	2066167
File Format	PDF
ISSN	00939994
Volume Number	50
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Switching loss Transient analysis Clamps Rails Semiconductor diodes Current measurement snubbers Integrated-gate commutated thyristors (IGCTs) inverters multilevel systems power semiconductor devices
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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Characterization of 4.5 kV–5.5 kA IGCTs within a medium voltage 3L-ANPC phase leg

Experimental Investigation of the Commutations of a 3L-ANPC Phase Leg Using 4.5-kV–5.5-kA IGCTs

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Design, simulation and realization of high power NPC converters equipped with IGCTs

Optimum switching sequence determination for IGCT based ANPC topology

Switching Loss Analysis of 4.5-kV–5.5-kA IGCTs Within a 3L-ANPC Phase Leg Prototype

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