NDLI: High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Anthony, P. McNeill, N. Holliday, D.
Copyright Year	1972
Abstract	Parasitic inductance in the gate path of a silicon carbide MOSFET places an upper limit upon the switching speeds achievable from these devices, resulting in unnecessarily high switching losses due to the introduction of damping resistance into the gate path. A method to reduce switching losses is proposed, using a resonant gate driver to absorb parasitic inductance in the gate path, enabling the gate resistor to be removed. The gate voltage is maintained at the desired level using a feedback loop. Experimental results for a 1200-V silicon carbide MOSFET gate driver are presented, demonstrating the switching loss of 230 μJ at 800 V and 10 A. This represents a 20% reduction in switching losses in comparison to that of conventional gate drive methods.
Sponsorship	IEEE Industry Applications Society
Starting Page	573
Ending Page	583
Page Count	11
File Size	1984445
File Format	PDF
ISSN	00939994
Volume Number	50
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates MOSFET Silicon carbide Voltage measurement Switches Switching loss Inductance switching transients Current-source driver power FETs power MOSFETs resonant gate driver silicon carbide (SiC)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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