NDLI: Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

Content Provider	IEEE Xplore Digital Library
Author	Mandal, K.C. Chaudhuri, S.K. Nguyen, K.V. Mannan, M.A.
Copyright Year	1963
Abstract	High resolution Schottky barrier detectors for alpha particles were fabricated using 20 μm thick detector grade n-type 4H-SiC epitaxial layer. The Schottky barrier detectors were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Deep level transient spectroscopic (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The detection properties of the Schottky detectors were characterized in terms of alpha particle peak widths in pulse height spectra obtained using a standard alpha emitting radioisotope source. The differences in the performance of different detectors were correlated on the basis of the barrier properties and the deep level defect type, concentration, and capture cross-section. Varying degree of the presence of deep level defects was found to be the reason behind the leakage current variation and the difference in the ultimate detector performance observed among the detectors. From the DLTS data it was found that at least two defect centers located at E_c-0.6 eV (Z_1/2) and at E_c -1.6 eV (EH_6/7),both related to carbon vacancies, affected the detector performance the most.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2338
Ending Page	2344
Page Count	7
File Size	996828
File Format	PDF
ISSN	00189499
Volume Number	61
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Detectors Leakage currents Energy resolution Schottky barriers Schottky diodes Alpha particles Noise Schottky barrier detector Alpha particle detection deep level transient spectroscopy epitaxial layer 4H-SiC
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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