NDLI: Low Energy X-Ray and <formula formulatype=inline> <tex Notation=TeX>$gamma$</tex></formula>-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

Content Provider	IEEE Xplore Digital Library
Author	Mandal, K.C. Muzykov, P.G. Chaudhuri, S.K. Terry, J.R.
Copyright Year	1963
Abstract	Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and γ-rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of commercial off-the-shelf (COTS) SiC UV photodiodes. The devices have been characterized by current-voltage (I-V) measurements in the 94-700 K range, thermally stimulated current (TSC) spectroscopy, x-ray diffraction (XRD) rocking curve measurements, and defect delineating chemical etching. I-V characteristics of the detectors at 500 K showed low leakage current ( nA at 200 V) revealing a possibility of high temperature operation. The XRD rocking curve measurements revealed high quality of the epitaxial layer exhibiting a full width at half maximum (FWHM) of the rocking curve ~3.6 arc sec. TSC studies in a wide range of temperature (94-550 K) revealed presence of relatively shallow levels ( ~0.25 eV) in the epi bulk with a density ~7×10¹³ cm^-3 related to Al and B impurities and deeper levels located near the metal-semiconductor interface.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2888
Ending Page	2893
Page Count	6
File Size	937793
File Format	PDF
ISSN	00189499
Volume Number	60
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Detectors Epitaxial layers Silicon carbide Temperature measurement Temperature Voltage measurement Current measurement 4H-SiC Defect delineating etching epitaxial layer Schottky barrier detector thermally stimulated current (TSC) spectroscopy x/gamma ray detection and XRD rocking curve
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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