NDLI: AC Bias-Temperature Stability of a-InGaZnO Thin-Film Transistors With Metal Source/Drain Recessed Electrodes

Content Provider	IEEE Xplore Digital Library
Author	Yu, E.K.-H. Abe, K. Kumomi, H. Kanicki, J.
Copyright Year	1963
Abstract	In this paper, we fabricated metal source/drain recessed nearly self-aligned amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) that are highly stable under ac bias-temperature stress (BTS). For TFTs of the size W/L=60 μm/10 μm, the stress-induced threshold voltage shifts are all within -0.35 V. A comprehensive investigation of ac BTS stress polarity, frame time, and duty cycle dependence is presented in the context of high-resolution high-refresh rate active-matrix flat-panel displays. We find that higher frequency bipolar ac pulses increase the device instability. The threshold voltage instability may be reduced significantly by decreasing the duty cycle of the stress waveform.
Sponsorship	IEEE Electron Devices Society
Starting Page	806
Ending Page	812
Page Count	7
File Size	2079163
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Stress Logic gates Electrodes Stress measurement Threshold voltage Thermal stability thin-film transistor (TFT) AC active-matrix flat-panel display (AM-FPD) amorphous indium–gallium–zinc–oxide (a-IGZO) bias-temperature stress (BTS) electrical stability self-aligned
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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