NDLI: Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype=inline><tex Notation=TeX>${rm SiO}_{2}$</tex></formula> Nanosphere Monolayer

Content Provider	IEEE Xplore Digital Library
Author	Jian-Kai Liou Po-Cheng Chou Chun-Chia Chen Yu-Chih Chang Wei-Chou Hsu Shiou-Ying Cheng Jung-Hui Tsai Wen-Chan Liu
Copyright Year	1963
Abstract	Enhanced light extraction efficiency (LEE) of high-power GaN-based light-emitting diodes (LEDs) is achieved by inserting a self-assembled SiO₂ nanosphere monolayer between the substrate and backside reflectors. Due to the presence of concave surfaces and photonic crystal-like air voids, downward photons emitted from multiple quantum well toward 3-D backside reflectors, could be reflected, scattered, and redirected into arbitrary directions for light extraction. These textured 3-D backside reflectors with an SiO₂ nanosphere monolayer could also extract the lateral light inside device into the normal direction and improve LEE. As compared with a conventional LED without a backside reflector and an LED with a planar hybrid backside reflector, at 350 mA, the studied device with a 3-D hybrid backside reflector exhibits 136.4% (165%) and 23.6% (27.4%) enhancements in light output power (luminous flux) without the degradation of electrical properties. Higher light intensities in light emission mapping image and far-field pattern are also obtained. These results show that a textured 3-D backside reflector could be easily formed by inserting an SiO₂ nanosphere monolayer to significantly enhance the performance of high-power GaN-based LEDs.
Sponsorship	IEEE Electron Devices Society
Starting Page	831
Ending Page	837
Page Count	7
File Size	5206130
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Photonics Substrates Nanoscale devices Power generation Metals Self-assembly textured backside reflector GaN light-emitting diodes (LEDs) nanospheres photonic crystal (PhC)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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