NDLI: Adjustable high-speed insulated gate bipolar transistor

Content Provider	IEEE Xplore Digital Library
Author	Fei Zhang Lina Shi Chengfang Li Liang Zhang Wei Wang Wen Yu Xiaowei Sun
Copyright Year	1973
Abstract	A new adjustable insulated gate bipolar transistor (IGBT) with Si/SiGe heterojunction collector structures is proposed to improve the operation speed and decrease the turnoff power loss by suppressing the tail-current. SiGe collector provides low contact resistance without consequently sacrificing turnoff losses, and also acts to suppress hole-injection into drift region during on-state and accelerate the clear sweep of the holes when the device is cutoff. On the other hand, turn-on voltage loss is increased due to the use of SiGe collector. This drawback can be minimized by using lower percentages of Ge in SiGe, since the potential barrier height at the Si/SiGe junction is controlled by the percentage of Ge in SiGe, which means the proposed IGBT can be tuned freely to meet different needs by means of changing the percentage of Ge region in the SiGe. Further, the proposed IGBT exhibits a more superior on-state/switching tradeoff relation when compared to the conventional IGBT. Two-dimensional device and circuit mixed-mode simulations are also performed to offer valuable information about the internal dynamical mechanisms of these devices, thus improving the understanding of device performance in SiGe collector applications
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	1021
Ending Page	1025
Page Count	5
File Size	578661
File Format	PDF
ISSN	00933813
Volume Number	34
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Silicon germanium Germanium silicon alloys Voltage Heterojunctions Sun Bipolar transistors Power electronics Conductivity Frequency Si/SiGe Insulated gate bipolar transistor (IGBT) power device
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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