NDLI: Unified Compact Model of Soft Breakdown Oxide Degradation and Its Impact on CMOS Circuits Reliability

Content Provider	IEEE Xplore Digital Library
Author	Gerrer, L. Ghibaudo, G. Rafik, M.
Copyright Year	2001
Abstract	Oxide breakdown (BD) modeling may allow important reliability margin extension since the BD has been shown to be not immediately destructive for circuit operation. BD characterization and understanding are strongly required to implement relevant models, reproducing all BD parameter deviations. Owing to damaged device characterization, we extract empirical laws of BD impact evolution and implement them in the first BD damaged compact model. Parameter variability correlation is explained through measurements and simulations, particularly threshold voltage deviation due to BD. Using our original compact model, we investigate BD impacts on circuit functioning, showing original effects and several improvements of previous studies. Inverter threshold, power consumption increase, BD path location impact, and SRAM cell SNM reduction are examined, demonstrating the ability of our compact model to estimate circuit lifetime extension, including circuit parameter deviations.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	171
Ending Page	176
Page Count	6
File Size	340487
File Format	PDF
ISSN	15304388
Volume Number	12
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inverters Integrated circuit modeling Threshold voltage Logic gates Random access memory MOS devices Electric breakdown dielectric breakdown Breakdown evolution channel debiasing current partitioning methodology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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