NDLI: The Impact of Gate-Oxide Breakdown on Common-Source Amplifiers With Diode-Connected Active Load in Low-Voltage CMOS Processes

Content Provider	IEEE Xplore Digital Library
Author	Jung-Sheng Chen Ming-Dou Ker
Copyright Year	1963
Abstract	The influence of gate-oxide reliability on common-source amplifiers with diode-connected active load is investigated with the nonstacked and stacked structures under analog application in a 130-nm low-voltage CMOS process. The test conditions of this work include the dc stress, ac stress with dc offset, and large-signal transition stress under different frequencies and signals. After overstresses, the small-signal parameters, such as small-signal gain, unity-gain frequency, phase margin, and output dc voltage levels, are measured to verify the impact of gate-oxide reliability on circuit performances of the common-source amplifiers with diode-connected active load. The small-signal parameters of the common-source amplifier with the nonstacked diode-connected active-load structure are strongly degraded than that with the stacked diode-connected active-load structure due to a gate-oxide breakdown under analog and digital applications. The common-source amplifiers with diode-connected active load are not functionally operational under digital application due to the gate-oxide breakdown. The impact of soft and hard gate-oxide breakdowns on the common-source amplifiers with nonstacked and stacked diode-connected active-load structures has been analyzed and discussed. The hard breakdown has more serious impact on the common-source amplifiers with diode-connected active load.
Sponsorship	IEEE Electron Devices Society
Starting Page	2860
Ending Page	2870
Page Count	11
File Size	448100
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Electric breakdown MOSFET circuits CMOS integrated circuits Stress Reliability MOSFETs soft breakdown Analog integrated circuit common-source amplifier dielectric breakdown gate-oxide reliability hard breakdown
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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