NDLI: Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene)

Content Provider	IEEE Xplore Digital Library
Author	Liu, Y.R. Liao, R. Lai, P.T. Yao, R.H.
Copyright Year	2001
Abstract	A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases slightly, the off-state current increases, and the threshold voltage shifts toward the positive direction. The threshold shifts under gate- and drain-bias stresses are observed to be logarithmically dependent on time, and the decay rate of the threshold-voltage shift is independent of temperature. The results suggest that the origin of the threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the gate dielectric or at the interface, while time-dependent charge trapping in the deep trap states and creation of defect states in the channel region are responsible for the drain-bias stress effect on the PTFT.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	58
Ending Page	62
Page Count	5
File Size	581123
File Format	PDF
ISSN	15304388
Volume Number	12
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Logic gates Polymers Dielectrics Stress measurement Semiconductor device measurement Thin film transistors threshold-voltage shift Bias stress effect polymer thin-film transistor (PTFT) stability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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