NDLI: High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT

Content Provider	IEEE Xplore Digital Library
Author	Abe, M. Abe, Y. Kogushi, N. Kian Siong Ang Hofstetter, R. Hong Wang Geok Ing Ng
Copyright Year	1980
Abstract	Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	1243
Ending Page	1245
Page Count	3
File Size	490579
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Temperature measurement Arrays Gallium arsenide Epitaxial layers HEMTs Fabrication Seebeck effect AlGaAs/InGaAs focal plane array (FPA) heterostructure thermopile (H-PILE) high-electron mobility transistor (HEMT) infrared (IR) image sensor
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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