NDLI: Hydrogen-Induced Resistive Switching in TiN/ALD <formula formulatype=inline><tex Notation=TeX>$ hbox{HfO}_{2}$</tex></formula>/PEALD TiN RRAM Device

Content Provider	IEEE Xplore Digital Library
Author	Yang Yin Chen Goux, L. Swerts, J. Toeller, M. Adelmann, C. Kittl, J. Jurczak, M. Groeseneken, G. Wouters, D.J.
Copyright Year	1980
Abstract	We developed TiN\HfO₂\TiN RRAM devices by using hydrogen-based plasma enhanced atomic layer deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN). Better endurance performance was gained as compared with cells having no hydrogen plasma treatment. The improved switching property is related to partial reduction in the stoichiometry ALD HfO₂ film, as indicated by electron recoil detection analysis. On the other hand, pure H₂ and NH₃ thermal annealing treatments were also utilized with the same purpose. However, neither of these treatments resulted in as good switching performances, which underlines the need of a plasma-based process to generate reactive H-based species able to controllably and partially reduce the HfO₂ layer.
Sponsorship	IEEE Electron Devices Society
Starting Page	483
Ending Page	485
Page Count	3
File Size	378151
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Hafnium compounds Plasmas Switches Argon Annealing Plasma measurements resistive switching memory (RRAM) Bipolar switching $\hbox{HfO}_{2}$ plasma enhanced atomic layer deposition (PEALD) TiN plasma treatment
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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