NDLI: Investigation of One-Dimensional Thickness Scaling on <formula formulatype=inline><tex Notation=TeX>$ hbox{Cu/HfO}_{x}/hbox{Pt}$</tex></formula> Resistive Switching Device Performance

Content Provider	IEEE Xplore Digital Library
Author	Ming Wang Hangbing Lv Qi Liu Yingtao Li Zhongguang Xu Shibing Long Hongwei Xie Kangwei Zhang Xiaoyu Liu Haitao Sun Xiaoyi Yang Ming Liu
Copyright Year	1980
Abstract	Scaling is a key issue for resistive switching (RS) memory before commercialization. In this letter, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaled. Serious deterioration of on/off ratio and device yield was observed when the material thickness scaled below 3 nm. A new method of two-step electrode deposition accompanied with reoxidization process was employed to overcome this problem. Significant improvements of device performance such as forming free, low RESET current (~1 μA), high on/off ratio (>; 100) and 100% device yield were achieved thereafter.
Sponsorship	IEEE Electron Devices Society
Starting Page	1556
Ending Page	1558
Page Count	3
File Size	496725
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium compounds Switches Electrodes Performance evaluation Resistance Copper scaling $\hbox{HfO}_{x}$ resistive switching (RS) resistive random access memory (RRAM)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

On the Bipolar Resistive Switching Memory Using $ hbox{TiN/Hf/HfO}_{2}/hbox{Si}$ MIS Structure

A Self-Rectifying $hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $hbox{AlO}_{y}$ Incorporation Into $hbox{HfO}_{x}$ Switching Dielectrics

The Role of Ti Capping Layer in HfO_x-Based RRAM Devices

Reset Instability in $hbox{Cu}/hbox{ZrO}_{2}$ :Cu/Pt RRAM Device

Study of Multilevel High-Resistance States in HfO_x-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Self-Selection Unipolar $hbox{HfO}_{x}$ -Based RRAM

Analysis of the Switching Variability in $hbox{Ni/HfO}_{2}$-Based RRAM Devices

A High-Yield $hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

Investigation of One-Dimensional Thickness Scaling on $ hbox{Cu/HfO}_{x}/hbox{Pt}$ Resistive Switching Device Performance

Similar Documents

On the Bipolar Resistive Switching Memory Using $ hbox{TiN/Hf/HfO}_{2}/hbox{Si}$ MIS Structure

A Self-Rectifying $hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $hbox{AlO}_{y}$ Incorporation Into $hbox{HfO}_{x}$ Switching Dielectrics

The Role of Ti Capping Layer in HfOx-Based RRAM Devices

Reset Instability in $hbox{Cu}/hbox{ZrO}_{2}$ :Cu/Pt RRAM Device

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Self-Selection Unipolar $hbox{HfO}_{x}$ -Based RRAM

Analysis of the Switching Variability in $hbox{Ni/HfO}_{2}$-Based RRAM Devices

A High-Yield $hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

Investigation of One-Dimensional Thickness Scaling on $ hbox{Cu/HfO}_{x}/hbox{Pt}$ Resistive Switching Device Performance

The Role of Ti Capping Layer in HfO_x-Based RRAM Devices

Study of Multilevel High-Resistance States in HfO_x-Based Resistive Switching Random Access Memory by Impedance Spectroscopy