NDLI: Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress

Content Provider	IEEE Xplore Digital Library
Author	Wun-Cheng Luo Kuan-Liang Lin Jiun-Jia Huang Chung-Lun Lee Tuo-Hung Hou
Copyright Year	1980
Abstract	This letter proposes a novel technique for predicting with high confidence the disturbance of the resistive-switching random access memory (RRAM) RESET state based on ramped voltage stress. The technique yields statistical distributions and voltage acceleration parameters equivalent to those of a conventional constant voltage method. Several ramp rates and acceleration models were validated for the accuracy regarding conversion between the two methods. The proposed method not only reduces the time and cost of reliability analysis but also provides a quantitative link between disturbance properties and the widely available RRAM data measured by a linear voltage ramp. Additionally, the non-Poisson area scaling supports the localized filament model.
Sponsorship	IEEE Electron Devices Society
Starting Page	597
Ending Page	599
Page Count	3
File Size	375780
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Reliability Acceleration Switches Breakdown voltage Voltage measurement Electric breakdown voltage acceleration model Read disturb reliability resistive switching resistive-switching random access memory (RRAM)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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