NDLI: Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer

Content Provider	IEEE Xplore Digital Library
Author	Jae-Hoon Lee Jae-Hyun Jeong Jung-Hee Lee
Copyright Year	1980
Abstract	AlGaN/GaN Schottky barrier diodes (SBDs) with and without the in situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with the SiCN cap layer exhibited improved electrical characteristics, such as the forward turn-on voltage of about 0.7 V, the forward current of 4.1 A at 1.5 V, and the reverse breakdown voltage of 630 V, as compared with the corresponding values of 0.8 V, 3.8 A, and 580 V for the reference SBD without the SiCN cap layer. This improvement in the device performance of the SiCN-SBD is because the in situ SiCN cap layer not only lowers the barrier height but also effectively passivates the surface of the device with better surface morphology.
Sponsorship	IEEE Electron Devices Society
Starting Page	492
Ending Page	494
Page Count	3
File Size	354671
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride Surface morphology Leakage current Passivation Schottky barriers silicon carbon nitride (SiCN) cap layer AlGaN/GaN in situ leakage current Schottky barrier diodes (SBDs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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