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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tsung-Hsun Tsai Hornsey, R. |
| Copyright Year | 1963 |
| Abstract | A complete pulse-frequency modulation (PFM) pixel design analysis and noise measurement for CMOS image sensor applications are presented. This work investigates the design parameters such as dynamic range (DR), signal linearity, and comparator characteristics. The design strategies for wide DR imaging are addressed in detail, and signal linearity is analyzed by considering the analog circuit parameters. The temporal noise is also measured to understand the design tradeoffs of the PFM pixels. The analysis is executed by performing HSPICE simulation and practical pixel measurements. The technology used by the measured pixel is a 0.18-μm one-poly six-metal CMOS process. According to the results, a PFM pixel using the submicrometer CMOS process has a DR of 130-160 dB, and the cost of reaching a higher signal linearity or lower noise floor is the loss of frame rate. In addition, the bandwidth of the comparator can be extended to improve sensor linearity. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 2675 |
| Ending Page | 2681 |
| Page Count | 7 |
| File Size | 825730 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 59 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Linearity Photodiodes Imaging Lighting Noise Dynamic range temporal noise CMOS image sensor dynamic range (DR) pixel pulse-frequency modulation (PFM) signal linearity |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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