NDLI: Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	DasGupta, S. Min Sun Armstrong, A. Kaplar, R.J. Marinella, M.J. Stanley, J.B. Atcitty, S. Palacios, T.
Copyright Year	1963
Abstract	Charge trapping and slow (from 10 s to >; 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages ( >; 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V_gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V_gs <; V_th, V_ds = 0). Two different trapping components, i.e., TG1 (E_a = 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al_0.15Ga_0.85N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E_a 1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps.
Sponsorship	IEEE Electron Devices Society
Starting Page	2115
Ending Page	2122
Page Count	8
File Size	1255969
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Gallium nitride Logic gates Transient analysis HEMTs MODFETs Charge carrier processes slow transients Galium nitride (GaN) high electron mobility transistor (HEMT) monochromatic light
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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