NDLI: Applicability of Macroscopic Transport Models to Decananometer MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Vasicek, M. Cervenka, J. Esseni, D. Palestri, P. Grasser, T.
Copyright Year	1963
Abstract	We perform a comparative study of various macroscopic transport models against multisubband Monte Carlo (MC) device simulations for decananometer MOSFETs in an ultra-thin body double-gate realization. The transport parameters of the macroscopic models are taken from homogeneous subband MC simulations, thereby implicitly taking surface roughness and quantization effects into account. Our results demonstrate that the drift-diffusion (DD) model predicts accurate drain currents down to channel lengths of about 40 nm but fails to predict the transit frequency below 80 nm. The energy-transport (ET) model, on the other hand, gives good drain currents and transit frequencies down to 80 nm, whereas below 80 nm, the error rapidly increases. The six moments model follows the results of MC simulations down to 30 nm and outperforms the DD and the ET models.
Sponsorship	IEEE Electron Devices Society
Starting Page	639
Ending Page	646
Page Count	8
File Size	809637
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mathematical model Equations Computational modeling MOSFETs Scattering Surface roughness Heating surface roughness scattering Drift-diffusion (DD) model energy-transport (ET) model higher order transport models quantization six moments (SM) model subband Monte Carlo (SMC)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration

Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects

Scattering from body thickness fluctuations in double gate mosfets: an ab initio monte carlo simulation study.

Consistent higher-order transport models for SOI MOSFETs

Monte carlo study on number of scattering events for quasi- ballistic transport in mosfets.

A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs

Monte Carlo/drift-diffusion coupling: non-equilibrium transport in deep submicron MOSFETs

Extending drift-diffusion paradigm into the era of FinFETs and nanowires

Applicability of Macroscopic Transport Models to Decananometer MOSFETs

Similar Documents

Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration

Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects

Scattering from body thickness fluctuations in double gate mosfets: an ab initio monte carlo simulation study.

Consistent higher-order transport models for SOI MOSFETs

Monte carlo study on number of scattering events for quasi- ballistic transport in mosfets.

A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs

Monte Carlo/drift-diffusion coupling: non-equilibrium transport in deep submicron MOSFETs

Extending drift-diffusion paradigm into the era of FinFETs and nanowires

Applicability of Macroscopic Transport Models to Decananometer MOSFETs