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Content Provider | IEEE Xplore Digital Library |
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Author | Gharib, H.H. Moussa, W.A. |
Copyright Year | 1992 |
Abstract | This letter presents a study on the feasibility of a new approach for developing a piezoresistive (PR) stress-sensing rosette that is capable of extracting the six stress components with temperature compensation using single-polarity sensing elements (n-type only). Current publicly available PR 3-D stress rosettes extract only four temperature-compensated stresses using a dual-polarity (n- and p-type) rosette. Our proposed approach generates a new set of independent equations based on varying the impurity concentration of the sensing elements and utilizes the distinct properties of the shear PR coefficient (π44) in n-Si. Fabrication of a single-polarity rosette requires less equipment compared to that of a dual-polarity rosette and helps reduce the footprint of the rosette. |
Sponsorship | IEEE Electron Devices Society American Society of Mechanical Engineering (ASME) |
Starting Page | 555 |
Ending Page | 557 |
Page Count | 3 |
File Size | 142764 |
File Format | |
ISSN | 10577157 |
Volume Number | 20 |
Issue Number | 3 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-06-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Stress Temperature sensors Impurities Piezoresistance Silicon Equations temperature compensation Doping piezoresistance piezoresistive (PR) devices stress sensor |
Content Type | Text |
Resource Type | Article |
Subject | Mechanical Engineering Electrical and Electronic Engineering |
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