NDLI: Strengthening for sc-Si Solar Cells by Surface Modification With Nanowires

Content Provider	IEEE Xplore Digital Library
Author	Chi-Nan Chen Chuan-Torng Huang Chen-Liang Chao Hou, M.T.-K. Wen-Ching Hsu Yeh, J.A.
Copyright Year	1992
Abstract	Bending strength of single-crystalline silicon (sc-Si) substrates enhanced by forming silicon nanowires (SiNWs) on the surfaces has been investigated for the application of sc-Si solar cells. As operated under the three-point-bending test, the 40-mm-long, 20-mm-wide, and 0.61-mm-thick sc-Si substrates show a high bending strength of 1.02 ± 0.11 GPa and maintain bulk properties. By this strengthening method, a hand-bent 6-in 0.23-mm-thick sc-Si solar cell shows the displacement of 35 mm and the curvature radius of 75 mm. Moreover, the bending strengths of strengthening sc-Si substrates for the SiNW depths of 1, 2, and 4 μm are 2.1, 4.3, and 6 times larger than that of pristine sc-Si substrates (i.e., 0.17 ± 0.01 GPa), respectively.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	549
Ending Page	551
Page Count	3
File Size	264018
File Format	PDF
ISSN	10577157
Volume Number	20
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicon Neodymium Substrates Surface treatment Nitrogen Stress solar energy and stress Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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