NDLI: A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO <formula formulatype=inline><tex Notation=TeX>$

Content Provider	IEEE Xplore Digital Library
Author	Sooyoung Park Chang-Ki Baek Hong-Hyun Park SeongWook Choi Young June Park
Copyright Year	2002
Abstract	The random telegraph signal in nanoscale devices is critically dependent on the spatial distribution and number of trapped charges in the gate oxide. Also, the drain-current fluctuation ΔID therein is known to be made up of the fluctuations in carrier number and mobility. In this paper, the local potential variation (LPV) arising from the single charge is incorporated into well-known mobility model and the effect of discrete trapped charges in the oxide layer is statistically investigated, using the in-house 3-D drift-diffusion and density-gradient device simulators. The LPV model covers the conventional distributed trapped charge mobility model but it can also accurately account for the observed fluctuations in ID in terms of carrier number and mobility fluctuations.
Sponsorship	IEEE Nanotechnology Council
Starting Page	699
Ending Page	705
Page Count	7
File Size	1506812
File Format	PDF
ISSN	1536125X
Volume Number	10
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fluctuations Solid modeling Electron traps Three dimensional displays Electric potential MOSFET circuits Logic gates random telegraph signal (RTS) 3-D device simulation drift-diffusion (DD) and density-gradient (DG) method local mobility fluctuation
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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