NDLI: Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors

Content Provider	IEEE Xplore Digital Library
Author	Sarpatwari, K. Awadelkarim, O.O. Passmore, L.J. Ho, T. Kuo, M. Dellas, N.S. Mayer, T.S. Mohney, S.E.
Copyright Year	2002
Abstract	We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.
Sponsorship	IEEE Nanotechnology Council
Starting Page	871
Ending Page	874
Page Count	4
File Size	386972
File Format	PDF
ISSN	1536125X
Volume Number	10
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Charge pumps Logic gates Frequency measurement Electron traps Current measurement Density measurement nanowire field-effect transistors (NWFET) Charge pumping (CP)
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors