NDLI: Retention Time and Depolarization in Organic Nonvolatile Memories Based on Ferroelectric Semiconductor Phase-Separated Blends

Content Provider	IEEE Xplore Digital Library
Author	Asadi, K. Wildeman, J. Blom, P.W.M. de Leeuw, D.M.
Copyright Year	1963
Abstract	Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding switching diodes. The ferroelectric polarization modulates the injection barrier, yielding an injection-limited off-state and a space-charge-limited on -state. To study the effect of depolarization, an additional polyphenylenevinylene-type semiconductor layer with the highest occupied molecular orbital energy that is comparable to that of rir-P3HT has been inserted in the diode stack. When the ad-layer is the injecting contact, the current modulation ratio goes to unity. The origin is a decrease in the effective band bending at the contact with increasing ad-layer thickness. When the counter electrode at the blend interface is the injecting contact, the diode can be switched, but the on-state is only stable when an electric field that is larger than the coercive field is applied. Upon field removal, the ferroelectric depolarizes, and the current drops to that of an unpoled pristine diode. The depolarization is confirmed by capacitance-voltage and retention time measurements. To realize bistable diodes with excellent retention times, the thickness of the semiconducting wetting layer may not be at most 10 nm.
Sponsorship	IEEE Electron Devices Society
Starting Page	3466
Ending Page	3471
Page Count	6
File Size	524229
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor diodes Nonvolatile memory Current density Semiconductor device measurement Switches Ferroelectric materials retention time Depolarization ferroelectric nonvolatile memory resistive switch
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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