NDLI: Mobility Enhancement in Strained <formula formulatype=inline><tex Notation=TeX>$n$</tex></formula> -FinFETs: Basic Insight and Stress Engineering

Content Provider	IEEE Xplore Digital Library
Author	Serra, N. Esseni, D.
Copyright Year	1963
Abstract	This paper presents both analytical models and Monte Carlo simulations concerning strain engineering in n-type silicon FinFETs. Our analysis identifies the stress configurations and the physical mechanisms able to produce a significant stress-induced mobility enhancement and provides the insight necessary for device optimization. We first derive analytical expressions for the stress-induced changes of the subband minima and of the transport masses, which clearly identify the stress components leading to mobility improvements. Then, we present multisubband Monte Carlo mobility simulations, which confirm the potentials for remarkable stress-induced mobility enhancements in n-FinFETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	482
Ending Page	490
Page Count	9
File Size	493741
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Silicon FinFETs Strain Effective mass Quantization Crystals strain engineering Crystal orientation electron mobility FinFET strain
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Mobility Enhancement in Strained $n$ -FinFETs: Basic Insight and Stress Engineering